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A 20-GHz IMPATT diode developmentThe development of 20 GHz, double drift GaAs IMPATT diodes is described. Advances made in material growth, diodes fabrication technology and packaging, and circuit design and diode testing are documented.
Document ID
19840003319
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Masse, D. (Raytheon Co. Lexington, MA, United States)
Adlerstein, M. G. (Raytheon Co. Lexington, MA, United States)
Lauterwasser, B. D. (Raytheon Co. Lexington, MA, United States)
Mcclymonds, J. W. (Raytheon Co. Lexington, MA, United States)
Steele, S. R. (Raytheon Co. Lexington, MA, United States)
Date Acquired
August 12, 2013
Publication Date
June 1, 1983
Publication Information
Publication: TRW Electronic Systems Group A 20-GHz IMPATT Transmitter
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
S-3057
Report Number: S-3057
Accession Number
84N11387
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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