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Silicon carbide, a high temperature semiconductorElectronic applications are described that would benefit from the availability of high temperature semiconductor devices. Potential materials for these devices are compared and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.
Document ID
19840006864
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Powell, J. A. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 4, 2013
Publication Date
January 1, 1983
Subject Category
Solid-State Physics
Report/Patent Number
E-1861
NAS 1.15:83514
NASA-TM-83514
Report Number: E-1861
Report Number: NAS 1.15:83514
Report Number: NASA-TM-83514
Meeting Information
Meeting: Cleveland Electron. Conf. (CECON ''83)
Location: Cleveland, OH
Country: United States
Start Date: October 4, 1983
End Date: October 6, 1983
Sponsors: IEEE
Accession Number
84N14932
Funding Number(s)
PROJECT: RTOP 505-40-5A
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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