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Low noise tuned amplifierA bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.
Document ID
19840014819
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Kleinberg, L. L.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
September 4, 2013
Publication Date
March 13, 1984
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: US-PATENT-4,437,069
Patent Number: NASA-CASE-GSC-12567-1
Patent Application Number: US-PATENT-APPL-SN-373839
Accession Number
84N22887
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,437,069|NASA-CASE-GSC-12567-1
Patent Application
US-PATENT-APPL-SN-373839
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