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Process Research On Polycrystalline Silicon Material (PROPSM)Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.
Document ID
19840020145
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Culik, J. S.
(Solarex Corp. Rockville, MD, United States)
Wohlgemuth, J. H.
(Solarex Corp. Rockville, MD, United States)
Date Acquired
September 4, 2013
Publication Date
January 1, 1982
Subject Category
Energy Production And Conversion
Report/Patent Number
JPL-9950-835
QR-8
DOE/JPL-955902/82-8
DRL-156
NASA-CR-173753
NAS 1.26:173753
Report Number: JPL-9950-835
Report Number: QR-8
Report Number: DOE/JPL-955902/82-8
Report Number: DRL-156
Report Number: NASA-CR-173753
Report Number: NAS 1.26:173753
Accession Number
84N28214
Funding Number(s)
CONTRACT_GRANT: JPL-955902
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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