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overview of bulk silicon crystal growthThe Czochralski and float-zone techniques are reviewed and the consequences of high growth rates in the growth of electronic grade silicon are examined. Impurity segregation coefficients are defined.
Document ID
19840020548
Document Type
Conference Paper
Date Acquired
August 12, 2013
Publication Date
April 15, 1984
Publication Information
Publication: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19840020545Analytic PrimaryProceedings of the Flat-plate Solar Array Project Research Forum on the High-speed Growth and Characterization of Crystals for Solar Cells
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