NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Overview of Bulk Silicon Crystal GrowthThe Czochralski and float-zone techniques are reviewed and the consequences of high growth rates in the growth of electronic grade silicon are examined. Impurity segregation coefficients are defined.
Document ID
19840020548
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Date Acquired
August 12, 2013
Publication Date
April 15, 1984
Publication Information
Publication: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells
Subject Category
Solid-State Physics
Accession Number
84N28617
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Document Inquiry

Available Downloads

There are no available downloads for this record.

Related Records

IDRelationTitle19840020545Collected WorksProceedings of the Flat-plate Solar Array Project Research Forum on the High-speed Growth and Characterization of Crystals for Solar Cells
No Preview Available