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silicon foils growth by interface-controlled crystallizationDuring interface controlled crystallization (ICC) the chance to accelerate the removal of crystallization heat is the basis for high pulling rates of about 100 mm/min. The forced heat flow from the extended crystallization front to a cooling ramp is controlled by a lubricating melt film which also influences the crystallization behavior by suppressing nucleation centers. The basic principles of this full casting technique are presented and the influences of process parameters on the morphology of prepared silicon foils are demonstrated. Three different types of crystalline structure were found in silicon foils grown to ICC technique: dendritic, coarse granular and monocrystalline with (111) 211 orientation. The criteria for their appearance of process variables are discussed.
Document ID
19840020559
Document Type
Conference Paper
Authors
Helmreich, D.
(Heliotronic G.m.b.H. Burghausen, Germany)
Date Acquired
August 12, 2013
Publication Date
April 15, 1984
Publication Information
Publication: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19840020545Analytic PrimaryProceedings of the Flat-plate Solar Array Project Research Forum on the High-speed Growth and Characterization of Crystals for Solar Cells
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