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the effect of creep on the residual stresses generated during silicon sheet growthThe modeling of stresses generated during the growth of thin silicon sheets at high speeds is an important part of the EFG technique since the experimental measurement of the stresses is difficult and prohibitive. The residual stresses which arise in such a growth process lead to serious problems which make thin Si ribbons unsuitable for fabrication. The constitutive behavior is unrealistic because at high temperature (close to the melting point) Si exhibits considerable creep which significantly relaxes the residual stresses. The effect of creep on the residual stresses generated during the growth of Si sheets at high speeds was addressed and the basic qualitative effect of creep are reported.
Document ID
19840020565
Document Type
Conference Paper
Authors
Hutchinson, J. W.
(Harvard Univ. Cambridge, MA, United States)
Lambropoulos, J. C.
(Harvard Univ. Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
April 15, 1984
Publication Information
Publication: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells
Subject Category
SOLID-STATE PHYSICS
Funding Number(s)
CONTRACT_GRANT: JPL-956312
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19840020545Analytic PrimaryProceedings of the Flat-plate Solar Array Project Research Forum on the High-speed Growth and Characterization of Crystals for Solar Cells
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