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Experimental Aspects of the Study of Stress Generating Mechanisms in Silicon Sheet GrowthStress analysis on silicon sheet grown at high speeds of the growth behavior and defect structure of 10 cm wide ribbon produced by the EFG technique was examined. The ribbon temperature field, the high temperature creep response of silicon, and approaches to measurement of the residual stress are investigated.
Document ID
19840020566
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Kaleja, J. P. (Mobil Tyco Solar Energy Corp. Waltham, MA, United States)
Bell, R. O. (Mobil Tyco Solar Energy Corp. Waltham, MA, United States)
Date Acquired
August 12, 2013
Publication Date
April 15, 1984
Publication Information
Publication: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells
Subject Category
Solid-State Physics
Accession Number
84N28635
Funding Number(s)
CONTRACT_GRANT: JPL-956312
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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IDRelationTitle19840020545Collected WorksProceedings of the Flat-plate Solar Array Project Research Forum on the High-speed Growth and Characterization of Crystals for Solar Cells
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