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high speed crystal growth by q-switched laser meltingThe modification of the structural and electrical properties of semiconductors short radiation pulses obtained from Q-switched lasers is described. These modifications are accomplished by high heating and cooling rates. This processing revealed novel crystal growth and high speed resolidification phenomena. The behavior of semiconductor Si is analyzed. The annealing process typically employs short pulses of radiation in or near the visible region of the spectrum. The Q-switched ruby and Nd-YAG lasers are commonly used and these are sometimes mode locked to reduce the pulse length still further. Material to be annealed can be processed with a single large area radiation spot. Alternatively, a small radiation spot size can be used and a large sample area is covered by overlapping irradiated regions.
Document ID
19840020568
Document Type
Conference Paper
Authors
Cullis, A. G.
(Royal Signals and Radar Establishment Malvern, United Kingdom)
Date Acquired
August 12, 2013
Publication Date
April 15, 1984
Publication Information
Publication: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19840020545Analytic PrimaryProceedings of the Flat-plate Solar Array Project Research Forum on the High-speed Growth and Characterization of Crystals for Solar Cells
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