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maximization of growth rates during czochralski pullingIt was suggested from theory(1-4) that silicon can be grown from the melt at rates far exceeding the current state of the art. Previous theoretical and experimental investigations which predict maximum rates of pulling during Czochralski growth are reviewed. Several experimental methods are proposed to modify the temperature distribution in a growing crystal to achieve higher rates of pulling. A physical model of a Czochralski crystal of germanium in contact with its melt was used to quantitatively determine, by direct measurement of the axial temperature distribution in the solid, the increase in axial temperature gradients effected by an inverted conical heat reflector located above the melt and coaxially about the physical model. Preliminary results indicate that this is an effective method of increasing the thermal resistance between the hot melt and crucible wall and a growing crystal. Under these conditions the enhancement of the interfacial temperature gradients permit a commensurate increase in the rate of crystal pulling.
Document ID
19840020577
Document Type
Conference Paper
Authors
Wargo, M. J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
April 15, 1984
Publication Information
Publication: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19840020545Analytic PrimaryProceedings of the Flat-plate Solar Array Project Research Forum on the High-speed Growth and Characterization of Crystals for Solar Cells
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