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High density circuit technology, part 3Dry processing - both etching and deposition - and present/future trends in semiconductor technology are discussed. In addition to a description of the basic apparatus, terminology, advantages, glow discharge phenomena, gas-surface chemistries, and key operational parameters for both dry etching and plasma deposition processes, a comprehensive survey of dry processing equipment (via vendor listing) is also included. The following topics are also discussed: fine-line photolithography, low-temperature processing, packaging for dense VLSI die, the role of integrated optics, and VLSI and technology innovations.
Document ID
19840021021
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Wade, T. E.
(Mississippi State Univ. Mississippi State, MS, United States)
Date Acquired
September 4, 2013
Publication Date
March 1, 1982
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.26:162040
NASA-CR-162040
MSSU-EIRS-EE-82-2-PT-3
Report Number: NAS 1.26:162040
Report Number: NASA-CR-162040
Report Number: MSSU-EIRS-EE-82-2-PT-3
Accession Number
84N29090
Funding Number(s)
CONTRACT_GRANT: NAS8-33448
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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