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Development of long wavelength semiconductor diode lasers near 28 microns for use in infrared heterodyne spectrometersThe development of tunable diode lasers operating in the 28 micrometers spectral region for use in infrared heterodyne spectrometers is reported. A process capable of yielding lasers emitting 500 micron W of multimode power, 112 micron W in a true single mode and true single mode operation at laser currents of up to 35% above threshold was developed. Results were obtained from narrow mesastripe (20 micrometer wide) short cavity (120 micrometer length) laser configurations. Six stripe geometry lasers, with a variety of cavity widths and lengths were delivered. The techniques to fabricate such devices was obtained and the long term reliability of such lasers by reproducible electrical and optical output characteristics fabrication from lasers are demonstrated.
Document ID
19840024731
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Linden, K. J.
(Laser Analytics, Inc. Bedford, MA, United States)
Date Acquired
September 4, 2013
Publication Date
June 1, 1984
Subject Category
Lasers And Masers
Report/Patent Number
NASA-CR-175253
NAS 1.26:175253
Report Number: NASA-CR-175253
Report Number: NAS 1.26:175253
Accession Number
84N32802
Funding Number(s)
CONTRACT_GRANT: NAS5-26200
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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