The 20 GHz solid state transmitter design, impatt diode development and reliability assessment

A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were developed. The IMPATT diode reliability was assessed. A proof of concept solid state transmitter design and a technology assessment study were performed. The transmitter design utilizes technology which, upon implementation, will demonstrate readiness for development of a POC model within the 1982 time frame and will provide an information base for flight hardware capable of deployment in a 1985 to 1990 demonstrational 30/20 GHz satellite communication system. Life test data for Schottky barrier GaAs diodes and grown junction GaAs diodes are described. The results demonstrate the viability of GaAs IMPATTs as high performance, reliable RF power sources which, based on the recommendation made herein, will surpass device reliability requirements consistent with a ten year spaceborne solid state power amplifier mission.