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Development of a polysilicon process based on chemical vapor deposition, phase 1 and phase 2High-purity polycrystalline silicon was produced in an experimental, intermediate and advanced CVD reactor. Data from the intermediate and advanced reactors confirmed earlier results obtained in the experimental reactor. Solar cells were fabricated by Westinghouse Electric and Applied Solar Research Corporation which met or exceeded baseline cell efficiencies. Feedstocks containing trichlorosilane or silicon tetrachloride are not viable as etch promoters to reduce silicon deposition on bell jars. Neither are they capable of meeting program goals for the 1000 MT/yr plant. Post-run CH1 etch was found to be a reasonably effective method of reducing silicon deposition on bell jars. Using dichlorosilane as feedstock met the low-cost solar array deposition goal (2.0 gh-1-cm-1), however, conversion efficiency was approximately 10% lower than the targeted value of 40 mole percent (32 to 36% achieved), and power consumption was approximately 20 kWh/kg over target at the reactor.
Document ID
19840025944
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Plahutnik, F.
(Hemlock Semiconductor Corp. MI, United States)
Arvidson, A.
(Hemlock Semiconductor Corp. MI, United States)
Sawyer, D.
(Hemlock Semiconductor Corp. MI, United States)
Sharp, K.
(Hemlock Semiconductor Corp. MI, United States)
Date Acquired
September 4, 2013
Publication Date
August 1, 1982
Subject Category
Energy Production And Conversion
Report/Patent Number
NAS 1.26:173957
NASA-CR-173957
DRD-SE-2
DOE/JPL-955533-83/7
DRL-125
JPL-9950-889
Report Number: NAS 1.26:173957
Report Number: NASA-CR-173957
Report Number: DRD-SE-2
Report Number: DOE/JPL-955533-83/7
Report Number: DRL-125
Report Number: JPL-9950-889
Accession Number
84N34015
Funding Number(s)
CONTRACT_GRANT: JPL-955533
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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