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Process research of non-CZ silicon materialHigh risk, high payoff research areas associated with the Westinghouse process for producing photovoltaic modules using non- CZ sheet material were investigated. All work was performed using dendritic web silicon. The following tasks are discussed and associated technical results are given: (1) determining the technical feasibility of forming front and back junctions in non-CT silicon using dopant techniques; (2) determining the feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask; (3) determining the feasibility of applying liquid anti-reflective solutions using meniscus coating equipment; (4) studying the production of uniform, high efficiency solar cells using ion implanation junction formation techniques; and (5) quantifying cost improvements associated with process improvements.
Document ID
19840025946
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 4, 2013
Publication Date
January 1, 1983
Subject Category
Energy Production And Conversion
Report/Patent Number
DRD-SE-3
WAESD-TR-83-1007
NASA-CR-173954
DRL-157
NAS 1.26:173954
DOE/JPL-955909-83/11
Report Number: DRD-SE-3
Report Number: WAESD-TR-83-1007
Report Number: NASA-CR-173954
Report Number: DRL-157
Report Number: NAS 1.26:173954
Report Number: DOE/JPL-955909-83/11
Accession Number
84N34017
Funding Number(s)
CONTRACT_GRANT: JPL-955909
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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