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Development of metallization process: FSA project, cell and module formation research areaThis experiment is involved in determining bulk resistivity values for different past concentrations. Experiments were performed on silicon Cz and non-Cz wafers. To determine bulk resistivity more accurately, pastes were printed on ceramic substrates. Contact resistance was determined by measuring the voltage drop at constant current. Because of irregularity of grid profiles, accurate determination of cross sections of grid lines is difficult. The bulk resistivity is accurate when the resistivity of the metallization is much less than that of the layer beneath it. When the resistivity of the metal approaches that of the substrate, the actual resistivity will be larger than the measured value.
Document ID
19840025951
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Garcia, A., III
(Spectrolab, Inc. Sylmar, CA, United States)
Date Acquired
September 4, 2013
Publication Date
November 1, 1983
Subject Category
Energy Production And Conversion
Report/Patent Number
QTPR-6329-18
NASA-CR-173951
NAS 1.26:173951
DOE/JPL-956205-83/6
Report Number: QTPR-6329-18
Report Number: NASA-CR-173951
Report Number: NAS 1.26:173951
Report Number: DOE/JPL-956205-83/6
Accession Number
84N34022
Funding Number(s)
CONTRACT_GRANT: JPL-956205
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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