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Silicon carbide material sintered bodies manufacturingA method is described for producing a high density silicon carbide sintering substance which contains aluminum oxide. The sintering is done in CO gas atmosphere, which is kept at 2 to 20 atmospheric pressures.
Document ID
19840026503
Acquisition Source
Legacy CDMS
Document Type
Other - Other
Authors
Suzuki, K. (NASA Headquarters Washington, DC United States)
Shinohara, N. (NASA Headquarters Washington, DC United States)
Date Acquired
September 4, 2013
Publication Date
August 1, 1984
Subject Category
Composite Materials
Report/Patent Number
NAS 1.15:77596
NASA-TM-77596
Report Number: NAS 1.15:77596
Report Number: NASA-TM-77596
Accession Number
84N34574
Funding Number(s)
CONTRACT_GRANT: NASW-3541
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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