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Process and apparatus for growing a crystal ribbonA process and apparatus is disclosed for growing a crystal ribbon of a substance of theoretically infinite length from a melt of the substance. A pair of fixedly positioned edge defining members are partially submerged into the melt so as to break the surface of the melt at a predetermined distance from one another. The edge defining members are wettable by the melt and the predetermined distance substantially corresponds to the width of the crystal ribbon to be grown. The crystal ribbon is grown by contacting the surface of the melt with a seed ribbon between the edge defining members whereby a meniscus of the melt is established on the seed ribbon. The meniscus is stabilized by the meniscus of the melt on the edge defining members. Pulling the seed crystal ribbon away from the melt results in continuous growth of the crystal ribbon.
Document ID
19840027042
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Thornhill, J. W.
(JPL California Inst. of Tech., Pasadena, United States)
Date Acquired
August 12, 2013
Publication Date
September 4, 1984
Subject Category
Solid-State Physics
Report/Patent Number
Patent Number: NASA-CASE-NPO-15629-1
Patent Number: US-PATENT-4,469,552
Patent Application Number: US-PATENT-APPL-SN-371351
Accession Number
84N35113
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-NPO-15629-1|US-PATENT-4,469,552
Patent Application
US-PATENT-APPL-SN-371351
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