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Interaction between boron and intrinsic defects in GaAsA model has been developed to describe the interaction between boron and antisite defects in bulk grown undoped liquid uncapsulated Czochralski GaAs. This model helps explain the observed experimental behavior. The model indicates that the residual double acceptor can most likely be associated with either Ga(As) or B(As).
Document ID
19840051131
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.332896
Authors
Elliott, K. R. (Rockwell International Microelectronics Research and Development Center Thousand Oaks, CA, United States)
Date Acquired
August 12, 2013
Publication Date
May 15, 1984
Publication Information
Publication: Journal of Applied Physics
Volume: 55
ISSN: 0021-8979
Subject Category
Solid-State Physics
Report/Patent Number
ISSN: 0021-8979
Accession Number
84A33918
Funding Number(s)
CONTRACT_GRANT: NAS3-2224
CONTRACT_GRANT: NAS3-22235
Distribution Limits
Public
Copyright
Other

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