NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Diamond shines in high-power devicesThe 20-W S-band power amplifiers aboard the GOES E and F spacecraft exemplify the problems that type-IIa diamond heat sinks have been developed to solve, including the requirement for junction temperatures to be kept below 125 C. Diamond heat sinks allow high power S-band semiconductors to operate at a flange temperature of 70 C without exceeding the stipulated maximum junction temperature. Type-IIA diamond, which is an excellent electrical insulator, possesses a thermal conductivity four times better than pure copper at 100 C, and outperforms BeO by an even greater margin. Higher costs are offset by high reliability. Attention is presently given to the results of tests conducted by the NASA Goddard Space Flight Center.
Document ID
19840059359
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Line, L.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
August 12, 2013
Publication Date
July 1, 1984
Publication Information
Publication: Microwaves & RF
Volume: 23
ISSN: 0745-2993
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
ISSN: 0745-2993
Accession Number
84A42146
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available