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Treating silicon carbide sinter by heating in nitrogenA description is given of treating silicon carbide sinters by heating in nitrogen. A detailed explanation of the invention is presented. Two procedures to be followed in the invention are described.
Document ID
19850001823
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Takahata, S. (NASA Headquarters Washington, DC United States)
Date Acquired
September 5, 2013
Publication Date
August 1, 1984
Subject Category
Composite Materials
Report/Patent Number
NAS 1.15:77601
NASA-TM-77601
Report Number: NAS 1.15:77601
Report Number: NASA-TM-77601
Accession Number
85N10130
Funding Number(s)
CONTRACT_GRANT: NASW-3542
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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