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Simulation study of a new inverse-pinch high Coulomb transfer switchA simulation study of a simplified model of a high coulomb transfer switch is performed. The switch operates in an inverse pinch geometry formed by an all metal chamber, which greatly reduces hot spot formations on the electrode surfaces. Advantages of the switch over the conventional switches are longer useful life, higher current capability and lower inductance, which improves the characteristics required for a high repetition rate switch. The simulation determines the design parameters by analytical computations and comparison with the experimentally measured risetime, current handling capability, electrode damage, and hold-off voltages. The parameters of initial switch design can be determined for the anticipated switch performance. Results are in agreement with the experiment results. Although the model is simplified, the switch characteristics such as risetime, current handling capability, electrode damages, and hold-off voltages are accurately determined.
Document ID
19850002986
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Choi, S. H.
(Information and Control Systems, Inc. Hampton, VA, United States)
Date Acquired
September 5, 2013
Publication Date
October 1, 1984
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.26:172420
FR-684103
NASA-CR-172420
Report Number: NAS 1.26:172420
Report Number: FR-684103
Report Number: NASA-CR-172420
Accession Number
85N11294
Funding Number(s)
CONTRACT_GRANT: NAS1-17488
PROJECT: RTOP 506-55-73
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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