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Research on gallium arsenide diffused junction solar cellsThe feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.
Document ID
19850003149
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Borrego, J. M. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Ghandi, S. K. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Date Acquired
September 5, 2013
Publication Date
October 1, 1984
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-174057
NAS 1.26:174057
Report Number: NASA-CR-174057
Report Number: NAS 1.26:174057
Accession Number
85N11457
Funding Number(s)
CONTRACT_GRANT: NAG3-188
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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