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Sintering behavior of ultrafine silicon carbide powders obtained by vapor phase reactionThe sintering behavior of ultrafine SiC powder with average particle size of about 0.01-0.06 microns produced by a vapor phase reaction of the Me4Si-H2 system was studied at the temperature range of 1400-2050 deg. It was found that the homogeneous dispersion of C on SiC particles is important to remove the surface oxide layer effectively. B and C and inhibitive effect on SiC grain growth.
Document ID
19850003853
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Okabe, Y. (NASA Headquarters Washington, DC United States)
Miyachi, K. (NASA Headquarters Washington, DC United States)
Hojo, J. (NASA Headquarters Washington, DC United States)
Kato, A. (NASA Headquarters Washington, DC United States)
Date Acquired
September 5, 2013
Publication Date
June 1, 1984
Subject Category
Nonmetallic Materials
Report/Patent Number
NAS 1.15:77422
NASA-TM-77422
Report Number: NAS 1.15:77422
Report Number: NASA-TM-77422
Accession Number
85N12161
Funding Number(s)
CONTRACT_GRANT: NASW-3542
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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