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The 30 GHz solid state amplifier for low cost low data rate ground terminalsThis report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPATT amplifier not only met or exceeded all the program objectives, but also possesses the ability to operate in the pulse mode, which was not called for in the original contract requirements. The ability to operate in the pulse mode is essential for TDMA (Time Domain Multiple Access) operation. An output power of 20 W was achieved with a 1-dB instantaneous bandwidth of 260 MHz. The amplifier has also been tested in pulse mode with 50% duty for pulse lengths ranging from 200 ns to 2 micro s with 10 ns rise and fall times and no degradation in output power. This pulse mode operation was made possible by the development of a stable 12-diode power combiner/amplifier and a single-diode pulsed driver whose RF output power was switched on and off by having its bias current modulated via a fast-switching current pulse modulator. Essential to the overall amplifier development was the successful development of state-of-the-art silicon double-drift IMPATT diodes capable of reproducible 2.5 W CW output power with 12% dc-to-RF conversion efficiency. Output powers of as high as 2.75 W has been observed. Both the device and circuit design are amenable to low cost production.
Document ID
19850003992
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Ngan, Y. C.
(TRW Electronic Systems Group Redondo Beach, CA, United States)
Quijije, M. A.
(TRW Electronic Systems Group Redondo Beach, CA, United States)
Date Acquired
September 5, 2013
Publication Date
September 1, 1984
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
REPT-4-9-T-10-F
NASA-CR-174795
NAS 1.26:174795
Report Number: REPT-4-9-T-10-F
Report Number: NASA-CR-174795
Report Number: NAS 1.26:174795
Accession Number
85N12300
Funding Number(s)
CONTRACT_GRANT: NAS3-23266
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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