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Bending strength studies on hot-pressed silicon carbideThe 4-point bending strength of 4 grades of hot-pressed SiC was determined at different temperatures. With a transgranular mode of fracture the values for bending strength are retained up to high temperatures. For intergranular fracture the decrease of strength is governed by subcritical crack growth. The intergranular fracture is caused by a high content of silicate glassy phase at the grain boundaries of hot-pressed SiC.
Document ID
19850004061
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kriegesmann, J.
(NASA Headquarters Washington, DC United States)
Date Acquired
September 5, 2013
Publication Date
August 1, 1984
Subject Category
Structural Mechanics
Report/Patent Number
NAS 1.15:77512
NASA-TM-77512
Report Number: NAS 1.15:77512
Report Number: NASA-TM-77512
Accession Number
85N12369
Funding Number(s)
CONTRACT_GRANT: NASW-3542
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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