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Pulsed Excimer Laser Processing for Cost-Effective Solar CellsResidual lattice damage by 5 keV ion implantation and surface flaws induced by wafer cleaning are proven to affect the V sub oc more adversely for laser annealed cells than conventional thermal diffusion. However, an alternative, molecular implantation of molecular species holds potential. The first experimental results are encouraging. The lack of a commercially available mass analyzed implantation with low energy, high fluence ions is constraining.
Document ID
19850016219
Acquisition Source
Headquarters
Document Type
Contractor Report (CR)
Authors
Wong, D.
(ARCO Solar, Inc. Chatsworth, CA, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1985
Subject Category
Energy Production And Conversion
Report/Patent Number
QR-3
DOE/JPL-956831-3
NASA-CR-175700
JPL-9950-1035
DRD-SE-3
NAS 1.26:175700
DRL-216
Report Number: QR-3
Report Number: DOE/JPL-956831-3
Report Number: NASA-CR-175700
Report Number: JPL-9950-1035
Report Number: DRD-SE-3
Report Number: NAS 1.26:175700
Report Number: DRL-216
Accession Number
85N24530
Funding Number(s)
CONTRACT_GRANT: JPL-956831
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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