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Nitridation of SiO2 for surface passivationAn attempt is made to relate the electrical properties of silicon dioxide film to the process history. A model is proposed to explain some of the observed results. It is shown that with our present knowledge of the dielectric, silicon dioxide film shows a lot of promise for its use in surface passivation, both for its resistance to impurity diffusion and for its resistance to radiation damage effects.
Document ID
19850023314
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Lai, S. K. C. (INTEL Corp. Santa Clara, CA, United States)
Date Acquired
August 12, 2013
Publication Date
May 15, 1985
Publication Information
Publication: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on High-Efficiency Crystalline Silicon Solar Cells
Subject Category
Energy Production And Conversion
Accession Number
85N31627
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19850023302Collected WorksProceedings of the Flat-plate Solar Array Project Research Forum on High-efficiency Crystalline Silicon Solar Cells19850023302Collected WorksProceedings of the Flat-plate Solar Array Project Research Forum on High-efficiency Crystalline Silicon Solar Cells
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