Application of closed-form solutions to a mesh point field in silicon solar cells

A computer simulation method is discussed that provides for equivalent simulation accuracy, but that exhibits significantly lower CPU running time per bias point compared to other techniques. This new method is applied to a mesh point field as is customary in numerical integration (NI) techniques. The assumption of a linear approximation for the dependent variable, which is typically used in the finite difference and finite element NI methods, is not required. Instead, the set of device transport equations is applied to, and the closed-form solutions obtained for, each mesh point. The mesh point field is generated so that the coefficients in the set of transport equations exhibit small changes between adjacent mesh points. Application of this method to high-efficiency silicon solar cells is described; and the method by which Auger recombination, ambipolar considerations, built-in and induced electric fields, bandgap narrowing, carrier confinement, and carrier diffusivities are treated. Bandgap narrowing has been investigated using Fermi-Dirac statistics, and these results show that bandgap narrowing is more pronounced and that it is temperature-dependent in contrast to the results based on Boltzmann statistics.