High-density Schottky barrier IRCCD sensors for remote sensing applicationsIt is pointed out that the ambitious goals envisaged for the next generation of space-borne sensors challenge the state-of-the-art in solid-state imaging technology. Studies are being conducted with the aim to provide focal plane array technology suitable for use in future Multispectral Linear Array (MLA) earth resource instruments. An important new technology for IR-image sensors involves the use of monolithic Schottky barrier infrared charge-coupled device arrays. This technology is suitable for earth sensing applications in which moderate quantum efficiency and intermediate operating temperatures are required. This IR sensor can be fabricated by using standard integrated circuit (IC) processing techniques, and it is possible to employ commercial IC grade silicon. For this reason, it is feasible to construct Schottky barrier area and line arrays with large numbers of elements and high-density designs. A Pd2Si Schottky barrier sensor for multispectral imaging in the 1 to 3.5 micron band is under development.
Document ID
19850028432
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Elabd, H. (RCA Laboratories Princeton, NJ, United States)
Tower, J. R. (RCA Labs. Princeton, NJ, United States)
Mccarthy, B. M. (RCA Advanced Technology Laboratories Camden, NJ, United States)