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Monolithically integrated array of GaAlAs electroabsorption modulatorsThe operation of an eight-element monolithic array of GaAlAs electroabsorption modulators has been demonstrated. The single-mode waveguide modulators are implemented in a reverse-biased p-pi-n heterojunction configuration, with center-to-center spacing of 9 microns between adjacent channels. This device may be useful for intensity modulation in high (spatial) resolution applications.
Document ID
19850036307
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Robinson, D. L. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Marshall, W. K. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Katz, J. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Smith, J. S. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Yariv, A. (California Institute of Technology Pasadena, CA, United States)
Date Acquired
August 12, 2013
Publication Date
August 16, 1984
Publication Information
Publication: Electronics Letters
Volume: 20
ISSN: 0013-5194
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
ISSN: 0013-5194
Accession Number
85A18458
Distribution Limits
Public
Copyright
Other

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