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Proton damage in GaAs solar cellsA simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.
Document ID
19850053971
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Wilson, J. W. (NASA Langley Research Center Hampton, VA, United States)
Walker, G. H. (NASA Langley Research Center Hampton, VA, United States)
Outlaw, R. A. (NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 12, 2013
Publication Date
April 1, 1984
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-31
ISSN: 0018-9383
Subject Category
Energy Production And Conversion
Report/Patent Number
ISSN: 0018-9383
Accession Number
85A36122
Distribution Limits
Public
Copyright
Other

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