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Tailorable Infrared Sensing DevicesAlternating layers of GexSi1.x and Si deposited by molecular beam epitaxy. When electric field applied across stack, acts as detector for infrared photons. Device fabricated on silicon substrate together with sophisticated very-large-scale integrated circuitry. Useful for wide range of applications related to robotics, space exploration, and terrestrial surveillance.
Document ID
19860000311
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Cheng, L. J. (Caltech)
Date Acquired
August 12, 2013
Publication Date
July 1, 1986
Publication Information
Publication: NASA Tech Briefs
Volume: 10
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-16607
ISSN: 0145-319X
Report Number: NPO-16607
Accession Number
86B10311
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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