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Molten salt corrosion of SiC: Pitting mechanismThin films of Na2SO4 and Na2CO3 at 1000 C lead to severe pitting of sintered alpha-SiC. These pits are important as they cause a strength reduction in this material. The growth of product layers is related to pit formation for the Na2CO3 case. The early reaction stages involve repeated oxidation and dissolution to form sodium silicate. This results in severe grain boundary attack. After this a porous silica layer forms between the sodium silicate melt and the SiC. The pores in this layer appear to act as paths for the melt to reach the SiC and create larger pits.
Document ID
19860002843
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Jacobson, N. S.
(NASA Lewis Research Center Cleveland, OH, United States)
Smialek, J. L.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
October 1, 1985
Subject Category
Nonmetallic Materials
Report/Patent Number
NAS 1.15:87143
NASA-TM-87143
E-2770
Report Number: NAS 1.15:87143
Report Number: NASA-TM-87143
Report Number: E-2770
Meeting Information
Meeting: Meeting of the Electrochem. Soc.
Location: Las Vegas, NV
Country: United States
Start Date: October 13, 1985
End Date: October 18, 1985
Accession Number
86N12310
Funding Number(s)
PROJECT: RTOP 533-05-12
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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