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Monolithic cascade-type solar cellsSolar cells consist of a semiconductor base, a bottom cell with a band-gap energy of E1, and a top cell with a band-gap energy of E2, and 0.96 E1 1.36 eV and (0.80 E + 0.77) eV E2 (0.80 E1 + 0.92) eV. A monolithic cascade-type solar cell was prepared with an n(+)-type GaAs base, a GaInAs bottom solar cell, and a GaAiInAs top solar cell. The surface of the cell is coated with a SiO antireflection film. The efficiency of the cell is 32%.
Document ID
19860006261
Acquisition Source
Legacy CDMS
Document Type
Other - Other
Authors
Yamamoto, S. (NASA Headquarters Washington, DC United States)
Shibukawa, A. (NASA Headquarters Washington, DC United States)
Yamaguchi, M. (NASA Headquarters Washington, DC United States)
Date Acquired
September 5, 2013
Publication Date
December 1, 1985
Subject Category
Energy Production And Conversion
Report/Patent Number
NAS 1.15:77926
NASA-TM-77926
Report Number: NAS 1.15:77926
Report Number: NASA-TM-77926
Accession Number
86N15731
Funding Number(s)
CONTRACT_GRANT: NASW-4006
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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