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Potential productivity benefits of float-zone versus Czochralski crystal growthEfficient mass production of single-crystal silicon is necessary for the efficient silicon solar arrays needed in the coming decade. However, it is anticipated that there will be difficulty growing such volumes of crystals using conventional Czochralski (Cz) methods. While the productivity of single crystals might increase with a crystal diameter increase, there are two obstacles to the mass production of large diameter Czochralski crystals, the long production cycle due to slow growth rate and the high heat requirements of the furnaces. Also counterproductive would be the large resistivity gradient along the growth direction of the crystals due to impurity concentration. Comparison between Float zone (FZ) and Cz crystal growth on the basis of a crystal 150 mm in diameter is on an order of two to four times in favor of the FZ method. This advantage results from high growth rates and steady-state growth while maintaining a dislocation-free condition and impurity segregation.
Document ID
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Abe, T.
(Shin-Etsu handotai Co. Gumma, Japan)
Date Acquired
August 12, 2013
Publication Date
August 15, 1985
Publication Information
Publication: JPL Proceedings of the Flat-Plate Solar Array Project Workshop
Subject Category
Solid-State Physics
Accession Number
Distribution Limits
Work of the US Gov. Public Use Permitted.
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