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High purith low defect FZ siliconThe most common intrinsic defects in dislocation-free float zone (FZ) silicon crystals are the A- and B-type swirl defects. The mechanisms of their formation and annihilation have been extensively studied. Another type of defect in dislocation-free FZ crystals is referred to as a D-type defect. Concentrations of these defects can be minimized by optimizing the growth conditions, and the residual swirls can be reduced by the post-growth extrinsic gettering process. Czochralski (Cz) silicon wafers are known to exhibit higher resistance to slip and warpage due to thermal stress than do FZ wafers. The Cz crystals containing dislocations are more resistant to dislocation movement than dislocated FZ crystals because of the locking of dislocations by oxygen atoms present in the Cz crystals. Recently a transverse magnetic field was applied during the FZ growth of extrinsic silicon. Resultant flow patterns, as revealed by striation etching and spreading resistance in Ga-doped silicon crystals, indicate strong effects of the transverse magnetic field on the circulation within the melt. At fields of 5500 gauss, the fluid flow in the melt volume is so altered as to affect the morphology of the growing crystal.
Document ID
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Kimura, H.
(Hughes Research Labs. Malibu, CA, United States)
Robertson, G.
(Hughes Research Labs. Malibu, CA, United States)
Date Acquired
August 12, 2013
Publication Date
August 15, 1985
Publication Information
Publication: JPL Proceedings of the Flat-Plate Solar Array Project Workshop
Subject Category
Solid-State Physics
Accession Number
Distribution Limits
Work of the US Gov. Public Use Permitted.
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