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Defects in silicon effect on device performance and relationship to crystal growth conditionsA relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.
Document ID
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Jastrzebski, L.
(RCA Labs. Princeton, NJ, United States)
Date Acquired
August 12, 2013
Publication Date
August 15, 1985
Publication Information
Publication: JPL Proceedings of the Flat-Plate Solar Array Project Workshop
Subject Category
Solid-State Physics
Accession Number
Distribution Limits
Work of the US Gov. Public Use Permitted.
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