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Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months.
Document ID
19860010682
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Martin, K. E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Gauthier, M. K.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Coss, J. R.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Dantas, A. R. V.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Price, W. E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
September 5, 2013
Publication Date
October 15, 1985
Subject Category
Solid-State Physics
Report/Patent Number
NAS 1.26:176557
NASA-CR-176557
JPL-PUB-85-43-VOL-1
Report Number: NAS 1.26:176557
Report Number: NASA-CR-176557
Report Number: JPL-PUB-85-43-VOL-1
Accession Number
86N20153
Funding Number(s)
CONTRACT_GRANT: NAS7-918
PROJECT: RTOP 323-51-43
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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