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Hybrid power semiconductorThe voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit. One FET is used to drive the bipolar transistor while the other FET is connected in series with the transistor and an inductive load. Both FETs are turned on or off by a single drive signal of load power, the second FET upon ceasing conductions, rendering one power electrode of the bipolar transistor open. Means are provided to dissipate currents which flow after the bipolar transistor is rendered nonconducting.
Document ID
19860011201
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Chen, D. Y. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 12, 2013
Publication Date
October 15, 1985
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: US-PATENT-4,547,686
Patent Number: NASA-CASE-LEW-13922-1
Patent Application Number: US-PATENT-APPL-SN-537614
Accession Number
86N20672
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,547,686|NASA-CASE-LEW-13922-1
Patent Application
US-PATENT-APPL-SN-537614

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