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Analysis of optically controlled microwave/millimeter wave device structuresThe light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor bandgap for GaAs MESFET, InP MESFET, Al0.3Ga0.7As/GaAs high electron mobility transistor (HEMT) and GaAs permeable base transistor (PBT) were analytically obtained. The GaAs PBT and GaAs MESFET have much higher sensitivity than InP MESFET. The Al0.3Ga0.7As/GaAs HEMT is observed to have the highest sensitivity. Variation in device parasitics due to optical illumination and its effect on the cutoff frequencies f sub T and f sub max are also investigated.
Document ID
19860015436
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Simons, R. N. (NASA Lewis Research Center Cleveland, OH, United States)
Bhasin, K. B. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1986
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-2926
NAS 1.15:87246
NASA-TM-87246
Report Number: E-2926
Report Number: NAS 1.15:87246
Report Number: NASA-TM-87246
Meeting Information
Meeting: International Microwave Symposium
Location: Baltimore, MD
Country: United States
Start Date: June 2, 1986
End Date: June 4, 1986
Sponsors: IEEE
Accession Number
86N24907
Funding Number(s)
PROJECT: RTOP 506-58-22
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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