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Reliability analysisThe objective was to search for and demonstrate approaches and concepts for fast wafer probe tests of mechanisms affecting the reliability of MOS technology and, based on these, develop and optimize test chips and test procedures. Progress is reported on four important wafer-level reliability problems: gate-oxide radiation hardness; hot-electron effects; time-dependence dielectric breakdown; and electromigration.
Document ID
19860019788
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Date Acquired
August 12, 2013
Publication Date
June 1, 1985
Publication Information
Publication: Product Assurance Technology for Custom LSI(VLSI Electronics
Subject Category
Quality Assurance And Reliability
Meeting Information
Meeting: Spring Meeting of the Electrochemical Society
Location: San Francisco, CA
Country: United States
Start Date: January 1, 1983
Accession Number
86N29260
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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