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Fault modelsA major problem in the qualification of integrated circuit cells and in the development of adequate tests for the circuits is to lack of information on the nature and density of fault models. Some of this information is being obtained from the test structures. In particular, the Pinhole Array Capacitor is providing values for the resistance of gate oxide shorts, and the Addressable Inverter Matrix is providing values for parameter distributions such as noise margins. Another CMOS fault mode, that of the open-gated transistor, is examined and the state of the transistors assessed. Preliminary results are described for a number of open-gated structures such as transistors, inverters, and NAND gates. Resistor faults are applied to various CMOS gates and the time responses are noted. The critical value for the resistive short to upset the gate response was determined.
Document ID
19860019792
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Sayah, H. R.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Buehler, M. G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 12, 2013
Publication Date
June 1, 1985
Publication Information
Publication: Product Assurance Technology for Custom LSI(VLSI Electronics p
Subject Category
Electronics And Electrical Engineering
Accession Number
86N29264
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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