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Relation between microstructural heterogeneous surface layer and nitrogen pressure during sintering in Si3N4-Ml2O3 ceramicsThe effects of N2 pressure (0.1 to 50 MPa) during sintering on the thickness of the microstructurally heterogeneous layer (MHL) formed near the surface of the compact, transverse-rupture strength, were investigated for Si3N4-(10 to 20) mol % MgO-5.5 mol % Al2O3 ceramics. The sintering temperature and time were 1973 K and 3.6 ks, respectively. The N2 gas was introduced into the furnace at about 1273 K. When the compacts were sintered under a certain N2 pressure, for example, about 20 and 7 MPa for 10 and 15 mol% MgO, respectively, the evolutions of N and Si were suppressed. The thickness of the MHL became very small and at the same time the strength of the surface layer of the compact (which was normally less than that of the inside in the case of 0.1 MPa) became nearly the same value as that of the inside. At higher pressure, the strength of both surface layer and the inside decreased considerably. Some discussion was made on these results.
Document ID
19860020516
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Hayashi, K.
(NASA Headquarters Washington, DC United States)
Onomura, Y.
(NASA Headquarters Washington, DC United States)
Date Acquired
September 5, 2013
Publication Date
April 1, 1986
Subject Category
Nonmetallic Materials
Report/Patent Number
NAS 1.15:88409
NASA-TM-88409
Report Number: NAS 1.15:88409
Report Number: NASA-TM-88409
Accession Number
86N29988
Funding Number(s)
CONTRACT_GRANT: NASW-4005
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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