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Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms
Document ID
19860027699
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1116/1.582986
Authors
Lewis, B. F. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Fernandez, R. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Madhukar, A. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lee, T. C. (Southern California, University Los Angeles, United States)
Date Acquired
August 12, 2013
Publication Date
October 1, 1985
Publication Information
Publication: Journal of Vacuum Science and Technology B
Volume: 3
ISSN: 0734-211X
Subject Category
Solid-State Physics
Report/Patent Number
ISSN: 0734-211X
Accession Number
86A12437
Funding Number(s)
CONTRACT_GRANT: N00014-83-K-0050
Distribution Limits
Public
Copyright
Other

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