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HEMT 60 GHz amplifierA high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance. The letter describes the materials and device processing technology developed for fabricating these devices.
Document ID
19860032193
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Berenz, J. (TRW, Inc. Redondo Beach, CA, United States)
Nakano, K. (TRW, Inc. Redondo Beach, CA, United States)
Hsu, T.-I. (TRW, Inc. Redondo Beach, CA, United States)
Goel, J. (TRW, Inc. Electronic Systems Group, Redondo Beach, CA, United States)
Date Acquired
August 12, 2013
Publication Date
October 24, 1985
Publication Information
Publication: Electronics Letters
Volume: 21
ISSN: 0013-5194
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
ISSN: 0013-5194
Accession Number
86A16931
Funding Number(s)
CONTRACT_GRANT: NAS5-28587
Distribution Limits
Public
Copyright
Other

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