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A new very high voltage semiconductor switchA new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.
Document ID
19860055711
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Sundberg, G. R. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1985
Subject Category
Electronics And Electrical Engineering
Accession Number
86A40449
Distribution Limits
Public
Copyright
Other

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