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Four-micron period ion-implanted bubble test circuitsPackaged magnetic bubble test circuits made with 4-micron period ion-implanted circuits were operated over -55 to +110 C. The circuits used bidirectional transfer and nondestructive detection and were made on bismuth-containing magnetic garnet films. Passivated circuits that incorporated an improved transfer conductor design were operated on films with higher Gilbert damping parameters. Potential advantages to using films with lower bubble aspect ratios for ion-implanted circuits are discussed. However nondestructive read-out detection was not realized with these 'flat' bubbles.
Document ID
19860056447
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Nelson, T. J.
(Bell Communications Research, Inc. Murray Hill, NJ, United States)
Fratello, V. J.
(Bell Communications Research, Inc. Murray Hill, NJ, United States)
Muehlner, F. J.
(Bell Communications Research, Inc. Murray Hill, NJ, United States)
Roman, B. J.
(Bell Communications Research, Inc. Murray Hill, NJ, United States)
Slusky, S. E. G.
(AT&T Bell Laboratories, Inc. Murray Hill, NJ, United States)
Date Acquired
August 12, 2013
Publication Date
March 1, 1986
Publication Information
Publication: IEEE Transactions on Magnetics
Volume: MAG-22
ISSN: 0018-9464
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
ISSN: 0018-9464
Accession Number
86A41185
Funding Number(s)
CONTRACT_GRANT: F33615-81-C-1404
Distribution Limits
Public
Copyright
Other

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