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Deep, Precise Etching in SemiconductorsSemiconductors made to accept precise etching after pretreatment. Combination of material destabilization and anisotropic etching permits formation of precise perpendicular-wall cavities in silicon wafers and other semiconductors. New technique extends capabilities of current micromachining technology to fabrication of submillimeter waveguide arrays and filters. Pre-etching process currently used to fabricate thin-walled arrays of submillimeter waveguides for use as dichroic bandpass filters. Possible applications include integration of sensor probes and processing of circuitry on same silicon chip.
Document ID
19870000154
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Shlichta, P. J.
(Caltech)
Barth, P. W.
(Stanford University)
Date Acquired
August 13, 2013
Publication Date
March 1, 1987
Publication Information
Publication: NASA Tech Briefs
Volume: 11
Issue: 3
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-16562
ISSN: 0145-319X
Report Number: NPO-16562
Accession Number
87B10154
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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