NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Press Enter or click the Search button to begin your search.

Back to Results
Optically controlled GaAs dual-gate MESFET and permeable base transistorsOptically induced voltage and dc characteristics of the GaAs Dual-gate MESFET and the Permeable Base Transistor (PBT) with optical illumination at wavelength below 0.87 microns were obtained and compared with GaAs MESFET. It was observed that PBT can handle higher current density when illuminated.
Document ID
19870000799
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Simons, R. N. (NASA Lewis Research Center Cleveland, OH, United States)
Bhasin, K. B. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1986
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.15:88823
E-3183-1
NASA-TM-88823
Report Number: NAS 1.15:88823
Report Number: E-3183-1
Report Number: NASA-TM-88823
Accession Number
87N10232
Funding Number(s)
PROJECT: RTOP 506-44-21
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available